A major breakthrough at Peking University might have just found the first step beyond silicon for semiconductors.
The post US Sanctions Accidentally Inspired China's Revolutionary Silicon-Free Transistor appeared first on Android Headlines ...
ONSEMI EliteSiC SPM 31 IPMs are firm’s first generation of 1200V silicon carbide (SiC) metal oxide semiconductor field-effect ...
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Interesting Engineering on MSNChina’s new silicon-free chip beats Intel with 40% more speed and 10% less energyA team of researchers at Peking University claims to have made a breakthrough in chip technology, potentially reshaping the ...
By way of example, TSMC's N3E node as used in the latest Apple chips has gate pitch of at minimum 45 nm and a metal pitch of ...
Researchers propose 3D semiconductor architectures using 2D semiconductor materials for better performance and scalability ...
The Chinese Academy of Physics researchers claim the method can be applied to any metal with a low melting point. This ...
The team, led by Peking University Professor Peng Hailin, has developed a self-engineered 2D transistor. The innovative ...
In a significant advancement for semiconductor technology, ECE's Prof. Kaustav Banerjee , co-authors Arnab Pal & Wei Cao and researchers have unveiled novel three-dimensional (3D) transistors ...
More digestible than silicon Troubled Chipzilla and its mates at TSMC might want to start sweating because a bunch of Beijing ...
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