Avoid the stress of overpaying for a stock or missing an opportunity by using the right tools and insights to evaluate Diodes Incorporated before investing. In this article, we go over a few key ...

Researchers at Fraunhofer IAF have developed a GaN MBDS suitable for the 1200 V voltage class with integrated free-wheeling diodes and successfully integrated it into their own GaN technology. The ...

MIIT Key Laboratory of Advanced Display Materials and Devices, Jiangsu Engineering Research Center for Quantum Dot Display, School of Materials Science and Engineering, Institute of Optoelectronics & ...

Infineon Technologies AG has released the world's first GaN power transistors with integrated Schottky diode for industrial use. The product family of medium-voltage CoolGaN Transistors G5 with ...

For power measurements in wireless telephony and high-speed data communication systems, the Schottky diode is the predominant choice. Current and voltage are indeed important, but power gives us a ...

However, the susceptibility of SiC Schottky barrier diodes (SBDs) to heavy ions is recognized as a critical issue due to Single Event Burnout (SEB) and Single Event Leakage Current (SELC). Despite ...

Beijing National Laboratory for Molecular Sciences, National Biomedical Imaging Center, College of Chemistry and Molecular Engineering, Peking University, 292 Chengfu Road, Haidian District, Beijing ...

3D linear Hall effect sensor simplifies automotive rotary motion and proximity detection Diodes Incorporated has introduced its first automotive-compliant 3D linear Hall effect sensor. The AH4930Q ...

Part Number: 1N 5819 / Forward Current : 1 A / Maxixum Repetitive Peak Reverse Voltage : 40 V Lead-Free / RoHS Compliant Electronics Component / Through Hole High Forward Surge Current Capability ...