Abstract: In this letter, the characteristics of positive bias temperature instability (PBTI) and hot carrier stress (HCS) for the low-temperature poly-Si thin-film transistors (LTPS-TFTs) with gate ...

Moreover, the crystallinity of the gate dielectrics is not a key factor in the degradation of the carrier mobility because both dielectrics remain amorphous according to TEM. However, the TEM results ...

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