IEEE16d
Performance Enhancement of n-Type AlN Schottky Barrier Diodes Using Oxygen-Rich Rapid Thermal Annealing Treatment
Abstract: In this letter, we present a high-performance aluminum nitride (AlN) lateral Schottky barrier diode (SBD) achieved through rapid thermal annealing (RTA) in an oxygen environment. This ...
Compoundsemiconductor.net21d
Transforming the current density of AlN Schottky barrier diodes
Graded layer in AlN Schottky barrier diodes increases their maximum current density by three orders of magnitude Engineers from North Carolina State University and Adroit Materials have raised the bar ...
gadgets36021d
Nothing Teases Potential Nothing Phone 3; Phone 3a, Phone 3a Plus Reportedly Listed on BIS
Nothing Phone 3a and Phone 3a Plus could get Snapdragon 7s Gen 3 SoCs The handsets may ship with Android 15-based Nothing OS 3.1 skin on top The Phone 3 may carry a Snapdragon 8 Gen 3 or Snapdragon 8s ...
Digit22d
Nothing Phone (3) or Phone (3a) to launch soon, and here’s what we know so far
While the teaser doesn’t explicitly reveal the product, rumors suggest it could be the Nothing Phone (3) or the Phone (3a). This launch timeline aligns with the previous releases. Just like ...
Compoundsemiconductor.net29d
Boosting AlN-on-AlN Schottky barrier diode performance
Engineers at Arizona State University are claiming to have delivered a significant breakthrough in the performance of AlN Schottky barrier diodes. “Our work is the first demonstration that ...