Ultraviolet photoelectron spectroscopy (UPS) provided insights into work functions and band alignments, helping confirm the presence of Schottky barriers at the metal–semiconductor interface.

Santa Clara, CA and Kyoto, Japan, Nov. 12, 2024 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced new surface mount SiC Schottky barrier diodes (SBDs) that improve insulation resistance by ...

This 'rectifier' technology can be easily integrated ... Existing technologies, such as the Schottky diode, face challenges in terms of low RF-to-DC conversion efficiency for faint ambient RF ...

Twenty-eight 100-V trench Schottky rectifiers from ST increase efficiency and power density in power converters operating at high switching frequencies. Target applications for the portfolio of ...

STMicroelectronics has introduced 100V trench Schottky rectifier diodes that boost efficiency in power converters operated at high switching frequencies. ST’s trench Schottky diodes significantly ...

A new technical review paper titled “The Schottky barrier transistor in emerging electronic devices” was published by researchers at THM University of Applied Sciences, Chalmers University of ...

PLANO, Texas--(BUSINESS WIRE)--Diodes Incorporated (Diodes) (Nasdaq: DIOD) today announced the release of its first Silicon Carbide (SiC) Schottky barrier diodes (SBD). The portfolio includes the ...

A new research paper titled “Control of the Schottky barrier height in monolayer WS 2 FETs using molecular doping” was published by researchers at NIST, Theiss Research, Naval Research Laboratory, and ...