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The approach realized by M. Wanke et al. (Fig. 1b) relies on using an n + -doped GaAs layer to serve as both the top layer of the QCL superlattice and the cathode contact for the Schottky diode.
Enhanced performance in AlGaN/GaN Schottky barrier diodes (SBDs) is investigated using a nanowire hybrid tri-anode structure that integrates 3-D Schottky junctions with tri-gate transistors. The ...
Programmable and nonvolatile Schottky junctions are highly desirable for next-generation electronic and neuromorphic systems. However, conventional metal–semiconductor and even van der Waals (vdW) ...
For devices with a 15 micron anode-tocathode distance, nearly 1.5 times increase in the blocking (breakdown) voltage (from 692 to 1030 V ) has been achieved by replacing the alloyed Ohmic contact at ...
The cathode was then supplied with air at a flow rate of 200 mL/min, and formic acid was applied to the anode to conduct a stability test for 14 h at a current density of 50 mA/cm 2. This measurement ...
Reference K. Kanegae et al. Appl. Phys. Express 18 041001 (2025) Pictured above: Forward current-voltage characteristics of the vertical rutile GeO2Schottky barrier diode, showing clear rectification ...
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