The approach realized by M. Wanke et al. (Fig. 1b) relies on using an n + -doped GaAs layer to serve as both the top layer of the QCL superlattice and the cathode contact for the Schottky diode.

We demonstrate ultralow leakage current AlGaN/GaN Schottky-barrier diodes (SBDs) based on a 3-D anode contact. In contrast to conventional AlGaN/GaN SBDs, this new device forms a Schottky contact ...

To form diodes, Li and co-workers began by adding a cathode. To form this contact they applied an ohmic recess process, before adding Ti/Al/Ni/Au in this exposed region. The next step involved adding ...

The forward voltage drop denoted in the datasheet of a discrete diode as V F is the voltage measured between the anode (A) and the cathode (K) of the diode subjected to an electric current I F in its ...

100 mm diameter formed from a Ti/Al/Ni/Au stack, and Schottky contacts of the same size produced by electron-beam evaporation of a Ni/Au stack. These diodes, with a cathode-to-anode distance of 5 mm, ...

In response to this trend, Infineon Technologies has introduced the CoolSiC Schottky diode 2000 V G5, the first discrete silicon carbide diode on the market with a breakdown voltage of 2000 V. The ...

Toshiba’s 1200V additions to its lineup of third-generation SiC Schottky barrier diodes contribute to high efficiency industrial power equipment.

schottky diode 4 Articles Almost Making A Camera Sensor From Scratch May 4, 2024 by Jenny List 5 Comments ...

The p-doped region functions as the anode, whilst the n-doped zone serves as the cathode. The mobile charge carriers traverse the junction and undergo recombination, leading to the formation of a ...