Abstract: High-voltage vertical regrown p-n junction diodes on bulk GaN substrates are reported in this letter with molecular-beam-epitaxy regrown p-GaN on metalorganic-chemical-vapor-deposition grown ...

Skycorp Solar Group Ltd, through its subsidiaries, designs, develops, manufactures, and sells solar PV products and solar power system solution services in Mainland China, rest of Asia, The United ...

The Ordinary Shares have been approved for listing on the Nasdaq Capital Market and are expected to commence trading on March 4, 2025, under the ticker symbol "PN." The Company has granted the ...

The Ordinary Shares commenced trading on Nasdaq Capital Market on March 4, 2025, under the ticker symbol “PN.” The Offering closed on March 5, 2025. In addition, the Company has granted the ...

A research team has developed high-performance diamond/ε-Ga 2 O 3 heterojunction pn diodes based on ultrawide bandgap semiconductors, achieving breakdown voltages exceeding 3 kV. This work was ...

P-N junction, Zener diode, BJT, MOS capacitor, MOSFET, LED, photo diode and solar cell. Basic control system components; Feedback principle; Transfer function; Block diagram representation ...

(Image: M. H. Memon) The research details the development and capabilities of this three-terminal diode. The device integrates a traditional two-terminal GaN-based p‒n diode with an additional third ...

In response to these challenges, Sun Haiding’s iGaN Lab at the University of Science and Technology of China (USTC) in collaboration with Liu Sheng’s team from Wuhan University have integrated a third ...

"Inspired by the limitations inherent in traditional two-terminal devices (e.g., p–n diode), we, sought to enhance the functionality and performance of conventional optoelectronic devices," Haiding ...

We fabricated pseudo vertical diamond pn junction diode and characterized its energy conversion efficiency under electron beam irradiation from 5-300-K. The diamond pn junction diode exhibits energy ...