Abstract: Practical mobility expressions are derived for transistors with one-dimensional (1-D) semiconductors in the channel, such as carbon nanotubes (CNTs) based on the 1-D Landauer-Büttiker ...

Department of Chemistry and Centre for Processable Electronics, Imperial College London, Molecular Sciences Research Hub (White City Campus), 80 Wood Lane Shepherd’s Bush, London W12 0BZ, United ...

Abstract: Commercially available normally-off GaN power high-electron-mobility transistor (HEMT) devices have typically adopted a p-GaN gate structure. In the gate region, there exist a Schottky ...

Biological and Environmental Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Kingdom of Saudi Arabia PSE, KAUST Solar Center (KSC), King ...

Transistors are the fundamental building blocks behind today's electronic revolution, powering everything from smartphones to powerful servers by controlling the flow of electrical currents.

Traditional silicon-based transistors can only switch so fast, limited by the physical materials and electrical resistance on which they rely. But a new breakthrough may change that entirely by ...