Abstract: In this article, we propose a high Schottky barrier source/drain contacts based bilateral gate and assistant Gate controlled bidirectional tunnel field Effect transistor (HSB-BTFET).

Abstract: 3C-Silicon Carbide (3C-SiC) Schottky Barrier Diodes on silicon (Si) substrates (3C-SiC-on-Si) seem not to comply with the superior wide band gap expectations in terms of excessive measured ...