News

IEEE19d
The Role of Near-Interface Traps in Modulating the Barrier Height of SiC Schottky Diodes
Abstract: The role of traps in the operation of Schottky barrier diodes is poorly understood. To explore this, SiC Schottky barrier diodes with a high density of near-interface traps were ...
IEEE9d
Experimental Demonstration of Charge- Balanced GaN Super-Heterojunction Schottky Barrier Diode Capable of 2.8 kV Switching
Abstract: This letter reports an experimental demonstration of charge-balanced GaN super-heterojunction Schottky barrier diodes (SHJ-SBDs). Charge balance between the n-type delta-doping and the ...
Electropages24d
Automotive planar Schottky diodes offered in space-saving packaging
Nexperia now offers a portfolio of 16 new low VF optimised planar Schottky diodes in CFP2-HP packaging. The portfolio includes eight industrial (e.g. PMEG6010EXD) and eight AEC-Q101 qualified (e.g.
C&EN25d
Investigating the Saturation Phenomenon of the Drain-Induced Barrier Lowering Effect on AlGaN/GaN High Electron Mobility Transistors with Schottky-Gate Structures
Article Views are the COUNTER-compliant sum of full text article downloads since November 2008 (both PDF and HTML) across all institutions and individuals. These metrics are regularly updated to ...
World Scientific16d
Silicon Carbide Power Devices
Power semiconductor devices are widely used for the control and management of electrical energy. The improving performance of power devices has enabled cost reductions and efficiency increases ...