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IEEE14d
Experimental Demonstration of Charge- Balanced GaN Super-Heterojunction Schottky Barrier Diode Capable of 2.8 kV Switching
Abstract: This letter reports an experimental demonstration of charge-balanced GaN super-heterojunction Schottky barrier diodes (SHJ-SBDs). Charge balance between the n-type delta-doping and the ...
IEEE25d
Thermal instability of Schottky diode barrier heights modified by inert ion sputter-etching damage
Abstract: The barrier height of Schottky diodes made to dry-etched silicon surfaces differs from those fabricated on wet chemically etched silicon. Some have suggested utilization of this phenomenon ...
C&EN27d
Multiple Schottky Barrier-Limited Field-Effect Transistors on a Single Silicon Nanowire with an Intrinsic Doping Gradient
In comparison to conventional (channel-limited) field-effect transistors (FETs), Schottky barrier-limited FETs possess some unique characteristics which make them attractive candidates for some ...
C&EN29d
Investigating the Saturation Phenomenon of the Drain-Induced Barrier Lowering Effect on AlGaN/GaN High Electron Mobility Transistors with Schottky-Gate Structures
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