Abstract: In this work, thermomechanical failures during single and repetitive surge current events of 40 mΩ class, 1.2 kV SiC MOSFET inverse diodes were investigated. The single event surge current ...

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Here, active control of SPPs using monolithically fabricated Schottky diodes has been first designed and realized, achieving a continuous and significant modulation of transmission, reflection, and ...

This letter describes successful acquisition of high avalanche capabilities for high breakdown voltage GaN p-n junction diodes. We have already reported the high avalanche capability by applying a ...

Here, we have demonstrated the current rectification switching in TMDC vertical diodes using a liquid metal (EGaIn) top electrode with a reconfigurable contact area. The rectification switching is ...