Abstract: To improve latch-up and forward voltage drop properties of the silicon-on-insulator (SOI) lateral insulated gate bipolar transistor (LIGBT), a new dual-channel structure is proposed and ...

Abstract: For the first time, mixed mode simulation is used to optimize the design of ultrathin-body dual-gate metal source/drain 25-nm CMOS, showing an advantage for source/drain-to-gate underlap, ...