News
Tech Xplore on MSN2h
Researchers achieve record-breaking RF GaN-on-Si transistor performance for high-efficiency 6G power amplifiersImec researchers have set a new benchmark in RF transistor performance for mobile applications. They present a gallium ...
Imec achieves record-breaking RF GaN-on-Si transistor performance for high-efficiency 6G power amplifiers Cross-sectional TEM image of the gate structure in imec’sGaN-on-silicon transistor. The image ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results
Feedback