Here is a detailed view of reverse polarity protection circuits for safeguarding battery-connected automotive systems.

Figure 2c illustrates a representative performance curve for a Schottky barrier diode detector. The incident RF power ... Figure 5: Pulsed signal characterization As an illustration, if two tones are ...

Medium-voltage CoolGaN G5 transistors from Infineon include a built-in Schottky diode to minimize dead-time losses and enhance system efficiency. The integrated diode also streamlines power stage ...

For hard-switched power topologies, Infineon is planning a 100V GaN transistors with a integrated Schottky diode. “Due to the lack of body diode in hard-switching applications, GaN-based topologies ...

The use of an anti-parallel Schottky barrier diode (SBD) can improve the performance and reliability of silicon carbide MOSFETs in power conversion applications. In this article, we will showcase ...

Engineers at Arizona State University are claiming to have delivered a significant breakthrough in the performance of AlN Schottky barrier diodes. “Our work is the first demonstration that ...

Formed on native substrates, AlN Schottky barrier diodes offer a 3 kV blocking voltage and excellent performance at elevated temperatures Engineers at Arizona State University are claiming to have ...

Rohm’s 100-V Schottky barrier diodes with a proprietary trench MOS structure deliver industry-leading reverse recovery time for high-speed switching applications. Rohm Semiconductor has released a new ...

Diamond-based p-type lateral Schottky barrier diodes (SBDs) with a 2-micrometer thick drift layer have been developed, both with and without Al2O3 field plates. The Schottky contacts, consisting of ...

Abstract: In this letter, we have reported a lateral diamond Schottky barrier diode (SBD) that was fabricated on a heteroepitaxial diamond substrate using all ion-implantation processes. The SBD ...