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Analysis of radiation-induced electrical degradation demonstrates that the inverse current gain variation in bipolar transistors exhibits approximate adherence to the Messenger-Spratt equation when ...

A research team at NIMS has developed the world’s first n-channel diamond MOSFET (metal-oxide-semiconductor field-effect transistor). This breakthrough marks a significant step toward realizing CMOS ...

'I'm very optimistic': Steel company owner tells CNN tariffs will help them ...

Abstract: This work investigated the physical limits of subthreshold swing (SS) in indium-tin-oxide (ITO) transistors with temperatures down to 20 K. As the temperature decreases, the ITO transistors ...

The SUNDIALS suite consists of the following packages for ordinary differential equation (ODE) systems, differential-algebraic equation (DAE) systems, and nonlinear algebraic systems: Warning to users ...

Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, College of Engineering, Seoul National University, Seoul 08826, Republic of Korea ...

Hunan Provincial Key Laboratory of Advanced Materials for New Energy Storage and Conversion, School of Materials Science and Engineering, Hunan University of Science and Technology, 2 Taoyuan Street, ...

The Feynman generation and those that follow will likely adopt semiconductor nodes featuring gate-all-around (GAA) transistors – the next evolution in transistor technology after FinFET.

Researchers from the National University of Singapore (NUS) have demonstrated that a single, standard silicon transistor, the fundamental building block of microchips used in computers, smartphones ...

OPEC+ is losing its ability to control oil prices due to weak global demand and rising non-OPEC oil supplies. (Image/Reuters) OPEC+ is losing its ability to control oil prices due to weak global ...