Abstract: The Fermi-level movement in a Schottky barrier is investigated using a bimetal thin-film ... This model is used to describe experimental results on Pt-Ti-GaAs and Ti-Pt-GaAs diodes. It is ...

Abstract: A high-frequency diode is proposed for use as a frequency multiplier element in the millimeter- and submillimeter-wavelength regions. The Schottky/2-DEG diode utilizes a Schottky contact ...

Department of Semiconductor Materials Engineering, Wrocław University of Science and Technology, Wyspiańskiego 27, Wrocław 50-370, Poland ...