For hard-switched power topologies, Infineon is planning a 100V GaN transistors with a integrated Schottky diode. “Due to the lack of body diode in hard-switching applications, GaN-based topologies ...

A technical paper titled “Roadmap for Schottky barrier transistors” was published by researchers at University of Surrey, Namlab gGmbH, Forschungszentrum Jülich (FZJ), et al. “In this roadmap we ...

Santa Clara, CA and Kyoto, Japan, Nov. 12, 2024 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced new surface mount SiC Schottky barrier diodes (SBDs) that improve insulation resistance by ...

Rohm’s 100-V Schottky barrier diodes with a proprietary trench MOS structure deliver industry-leading reverse recovery time for high-speed switching applications. Rohm Semiconductor has released a new ...

Abstract: This work investigates the device and circuit performance of an integrated MOSFET-Schottky diode solution for lowside switching, or synchronous rectifier, applications. The integrated diode ...

TRS2E65H TRS3E65H TRS4E65H TRS6E65H TRS8E65H TRS10E65H TRS12E65H TRS4V65H TRS6V65H TRS8V65H TRS10V65H TRS12V65H Follow the link below for more on Toshiba’s SiC Schottky Barrier Diodes.

A new technical review paper titled “The Schottky barrier transistor in emerging electronic devices” was published by researchers at THM University of Applied Sciences, Chalmers University of ...

PLANO, Texas--(BUSINESS WIRE)--Diodes Incorporated (Diodes) (Nasdaq: DIOD) today announced the release of its first Silicon Carbide (SiC) Schottky barrier diodes (SBD). The portfolio includes the ...

Schottky Barrier Diodes are built utilizing a metal electrode bonded to an N-type semiconductor that has undergone light doping, as opposed to a standard pn-junction diode, which is composed of a ...