News

IEEE10d
Experimental Demonstration of Charge- Balanced GaN Super-Heterojunction Schottky Barrier Diode Capable of 2.8 kV Switching
Abstract: This letter reports an experimental demonstration of charge-balanced GaN super-heterojunction Schottky barrier diodes (SHJ-SBDs). Charge balance between the n-type delta-doping and the ...
IEEE22d
Thermal instability of Schottky diode barrier heights modified by inert ion sputter-etching damage
Abstract: The barrier height of Schottky diodes made to dry-etched silicon surfaces differs from those fabricated on wet chemically etched silicon. Some have suggested utilization of this phenomenon ...
Electropages25d
Automotive planar Schottky diodes offered in space-saving packaging
Nexperia now offers a portfolio of 16 new low VF optimised planar Schottky diodes in CFP2-HP packaging. The portfolio includes eight industrial (e.g. PMEG6010EXD) and eight AEC-Q101 qualified (e.g.
C&EN26d
Investigating the Saturation Phenomenon of the Drain-Induced Barrier Lowering Effect on AlGaN/GaN High Electron Mobility Transistors with Schottky-Gate Structures
Article Views are the COUNTER-compliant sum of full text article downloads since November 2008 (both PDF and HTML) across all institutions and individuals. These metrics are regularly updated to ...