Vishay Intertechnology, Inc. said it has introduced a TrenchMOS barrier Schottky (TMBS) rectifier with the ... reduce power losses and improve the efficiency of the ORing diode on the high-voltage ...

BRUSSELS, Belgium — Four 100-V TMBS® trench MOS barrier Schottky rectifiers, from Vishay Intertechnology ... the devices reduce power loss and improve efficiency in freewheeling diodes, dc-to-dc ...

Trench MOS barrier Schottky diodes combine low VF and high-speed switching with improved protection from voltage transients, enabling the benefits of conventional planar Schottkys in 100-V and 120 ...

Santa Clara, CA and Kyoto, Japan, Feb. 15, 2024 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced new 100V breakdown Schottky Barrier Diodes ... first to adopt a trench MOS structure.

Vishay Intertechnology, Inc. expanded its offering of TMBS Trench MOS Barrier Schottky rectifiers with ... in solar cell junction boxes as bypass diodes for protection. The devices released ...

Santa Clara, CA and Kyoto, Japan, Nov. 12, 2024 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced new surface mount SiC Schottky barrier diodes (SBDs) that improve insulation resistance by ...

TRS2E65H TRS3E65H TRS4E65H TRS6E65H TRS8E65H TRS10E65H TRS12E65H TRS4V65H TRS6V65H TRS8V65H TRS10V65H TRS12V65H Follow the link below for more on Toshiba’s SiC Schottky Barrier Diodes.

A new technical review paper titled “The Schottky barrier transistor in emerging electronic devices” was published by researchers at THM University of Applied Sciences, Chalmers University of ...

Toshiba has announced twelve 650V silicon carbide (SiC) Schottky barrier diode (SBDs) based upon its 3rd generation technology. In this series, called TRSxxx65H, according to the company a new ...