Two gate drivers from ST provide programmable current for efficient three-phase brushless motor control in consumer and industrial equipment.

Abstract: Commercially available normally-off GaN power high-electron-mobility transistor (HEMT) devices have typically adopted a p-GaN gate structure. In the gate region, there exist a Schottky ...

we propose an integrated gate driver to specially limit the peak negative gate voltage of SiC MOSFETs introduced by the crosstalk phenomenon and the reliable short-circuit protection. A simple ...